Monolithic V-band pseudomorphic-MODFET low-noise amplifiers
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 199-204
- https://doi.org/10.1109/mwsym.1989.38701
Abstract
V-band, low noise MMICs (monolithic microwave integrated circuits) based on pseudomorphic modulation doped FETs (P-MODFETs) have been developed, and have yielded noise figures that are believed to be the lowest reported for any millimeter-wave MMIC. Single-stage low noise amplifiers with P-MODFETs as active elements (gate dimensions 0.35*60 mu m) exhibited minimum noise figures of 3.9 dB at 58 GHz, with an associated gain of 3.5 dB. Dual-stage MMICs had minimum noise figures of 5.3 dB at 58 GHz, with an associated gain of 8.2 dB, and maximum gain of 10.4 dB at 59.5 GHz. Further, a cascaded four-stage amplifier (two dual-stage MMIC modules) exhibited a 5.8-dB minimum noise figure at 58 GHz, with an associated gain of 18.3 dB, and 21.1 dB of maximum gain. Device processing uniformity and DC and RF reliability data are also presented.<>Keywords
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