High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

This publication has 8 references indexed in Scilit:

• An In_0.15Ga_0.85As/GaAs pseudomorphic single quantum well HEMT
  IEEE Electron Device Letters, 1985
• Noise behavior of 1-µm gate-length modulation-doped FET's from 10^-2to 10⁸Hz
  IEEE Electron Device Letters, 1985
• Comprehensive analysis of Si-doped ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ ($x=0\mathrm{} \mathrm{to} 1$): Theory and experiments
  Physical Review B, 1984
• The hemt: A superfast transistor: An experimental GaAs-AlGoAs device switches in picoseconds and generates little heat. This is just what supercomputers need
  IEEE Spectrum, 1984
• Design and fabrication of high transconductance modulation-doped (Al,Ga)As/GaAs FETs
  Journal of Vacuum Science & Technology B, 1983
• Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 1982
• Saturation velocity determination for In0.53Ga0.47As field-effect transistors
  Applied Physics Letters, 1981
• Schottky barrier heights of molecular beam epitaxial metal-AlGaAs structures
  Applied Physics Letters, 1981