Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor deposition
- 15 May 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (10) , 877-879
- https://doi.org/10.1063/1.92932
Abstract
We report, from Shubnikov‐de Haas and cyclotron resonance experiments, the first observation of a two‐dimensional, high‐mobility electron gas in a selectively doped In0.53Ga0.47 As‐InP heterojunction grown by metalorganic chemical vapor deposition. Several parameters of the electronic system under consideration are determined.Keywords
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