The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
- 1 June 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (6) , L455
- https://doi.org/10.1143/jjap.20.l455
Abstract
Ultrahigh two-dimensional electron gas mobilities of 244,000 cm2/Vs at 5 K and 117,000 cm2/Vs at 77 K with a sheet electron concentration of about 4.9×1011 cm-2 were achieved in a selectively doped GaAs/N-Al x Ga1-x As (x=0.26) heterostructure grown at a “medium” temperature of 580°C by MBE. The mobility obtained at 5 K is much higher that any yet reported for MBE-grown semiconductor materials.Keywords
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