Enhancement-Mode High Electron Mobility Transistors for Logic Applications
- 1 May 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (5) , L317
- https://doi.org/10.1143/jjap.20.l317
Abstract
Enhancement-mode high electron mobility transistors (E-HEMTs) with selectively doped GaAs/n-Al x Ga1-x As heterojunction structures grown by molecular beam epitaxy are described. E-HEMTs with 2- µm long gates have exhibited the square-law drain characteristic. The device has a g m of 409 mSmm-1 of gate width at 77 K and 193 mSmm-1 at 300 K. This value of g m at 77 K is the highest in all field effect devices reported thus far.Keywords
This publication has 3 references indexed in Scilit:
- WA-B5 high-electron mobility transistors with selectively doped GaAs/n-AlGaAs heterojunctionsIEEE Transactions on Electron Devices, 1980
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980
- The prospects for ultrahigh-speed VLSI GaAs digital logicIEEE Transactions on Electron Devices, 1979