Self-assembled InAs and In0.9Al0.1As quantum dots on (001)InP substrates grown by molecular beam epitaxy (MBE)

This publication has 21 references indexed in Scilit:

• Visible luminescence from semiconductor quantum dots in large ensembles
  Applied Physics Letters, 1995
• Optical investigation of the self-organized growth of InAs/GaAs quantum boxes
  Journal of Crystal Growth, 1995
• Spatially Resolved Visible Luminescence of Self-Assembled Semiconductor Quantum Dots
  Science, 1995
• InAs/GaAs quantum dots radiative recombination from zero‐dimensional states
  Physica Status Solidi (b), 1995
• Visible photoluminescence from N-dot ensembles and the linewidth of ultrasmall ${\mathrm{Al}}_{\mathit{y}}$${\mathrm{In}}_{1\mathrm{-}\mathit{y}}$As/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As quantum dots
  Physical Review B, 1994
• Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots
  Applied Physics Letters, 1994
• Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
  Physical Review Letters, 1994
• Structural and optical properties of self-assembled InGaAs quantum dots
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
• Molecular-beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
• Multidimensional quantum well laser and temperature dependence of its threshold current
  Applied Physics Letters, 1982