In situ ellipsometric characterization and process control for amorphous thin film deposition
- 31 December 1988
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 4 (6) , 729-736
- https://doi.org/10.1016/0749-6036(88)90204-2
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Effect of deposition conditions on the nucleation and growth of glow-discharge a-Si:HJournal of Applied Physics, 1987
- Spectroscopic ellipsometry: A new tool for nondestructive depth profiling and characterization of interfacesJournal of Applied Physics, 1986
- Dual-ion-beam deposition of carbon films with diamond-like propertiesThin Solid Films, 1985
- A spectroscopic ellipsometry study of the nucleation and growth of plasma-deposited amorphous siliconThin Solid Films, 1985
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Optical properties of thin filmsThin Solid Films, 1982
- Surface analysis during vapour phase growthJournal of Crystal Growth, 1980
- Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometryPhysical Review B, 1979
- Precision Bounds to Ellipsometer SystemsApplied Optics, 1975
- A high speed precision automatic ellipsometerSurface Science, 1969