The effect of radiation induced defects on the performance of high resistivity silicon diodes
- 1 August 1996
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 377 (2-3) , 224-227
- https://doi.org/10.1016/0168-9002(95)01413-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Nature of the Defect Determining the Fermi Level Stabilization in Irradiated SiliconPhysica Status Solidi (a), 1982
- A Two Level Model for Lifetime Reduction Processes in Neutron Irradiated Silicon and GermaniumIEEE Transactions on Nuclear Science, 1967