Nature of the Defect Determining the Fermi Level Stabilization in Irradiated Silicon

This publication has 9 references indexed in Scilit:

• On the nature of the “Limiting” Position of the fermi level in irradiated silicon
  Physica Status Solidi (a), 1979
• Energy dependence of defect energy levels in electron irradiated silicon
  Revue de Physique Appliquée, 1979
• Carbon interstitial in electron-irradiated silicon
  Solid State Communications, 1977
• EPR Observation of the Isolated Interstitial Carbon Atom in Silicon
  Physical Review Letters, 1976
• Electrical properties of silicon with divacancies
  Physica Status Solidi (a), 1975
• EPR evidence of the self-interstitials in neutron-irradiated silicon
  Solid State Communications, 1974
• Structure of multiple-vacancy (oxygen) centers in irradiated silicon
  Radiation Effects, 1971
• Radiation Defects Created by Co⁶⁰ γ‐Rays in p‐ and n‐Type Si of High Purity
  Physica Status Solidi (b), 1969
• Recombination Mechanisms
  Physica Status Solidi (b), 1968