Energy dependence of defect energy levels in electron irradiated silicon
Open Access
- 1 January 1979
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 14 (3) , 481-484
- https://doi.org/10.1051/rphysap:01979001403048100
Abstract
We have studied through capacitance techniques (TSCAP and DLTS) the variation of the introduction rate of defects with the energy of the electrons in n-type silicon irradiated at room temperature. The results obtained provide a direct confirmation of the identification of the observed defects which was proposed in the literature : the Ec - 0.39 and Ec - 0.23 eV levels, attributed to the divacancy are found to have a threshold whose value is two times the threshold energy (25 eV) for vacancy-type defects (the Ec - 0.43 eV level). The Ec - 0.33 eV which is not yet identified should correspond to a vacancy-type defect since its threshold energy is 25 eVKeywords
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