Studies of defects introduced by electron irradiation at 4.2 °K in p-silicon by thermally stimulated capacitance technique

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Abstract
Point defects, introduced at 4.2 °K in p‐type silicon by 1.5‐MeV electron irradiation, are studied by means of the thermally stimulated capacitance technique. Electronic states associated with the vacancy and the divacancy are observed, which enables us to study their correlated annealing. The respective donor energy levels, hole thermal emission rates, and annihilation activation energies are measured.