Properties of 1 MeV electron-irradiated defect centers in p-type silicon

This publication has 18 references indexed in Scilit:

• Thermally Stimulated Capacitance (TSCAP) in p-n Junctions
  Applied Physics Letters, 1972
• Impurity centers in PN junctions determined from shifts in the thermally stimulated current and capacitance response with heating rate
  Solid-State Electronics, 1972
• Thermal ionization rates and energies of electrons and holes at silver centers in silicon
  Physica Status Solidi (a), 1971
• Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments
  Solid-State Electronics, 1970
• Photoconductivity Studies of Defects inp-Type Silicon: Boron Interstitial and Aluminum Interstitial Defects
  Physical Review B, 1970
• Determination of deep centers in silicon by thermally stimulated conductivity measurements
  Solid-State Electronics, 1969
• LOW-TEMPERATURE HIGH-FREQUENCY CAPACITANCE MEASUREMENTS OF DEEP-AND SHALLOW-LEVEL IMPURITY CENTER CONCENTRATIONS
  Applied Physics Letters, 1969
• Photoconductivity Studies of Defects in Silicon: Divacancy-Associated Energy Levels
  Physical Review B, 1968
• Introduction Rates of Electrically Active Defects in n- and p-Type Silicon by Electron and Neutron Irradiation
  Journal of Applied Physics, 1968
• Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter
  Physical Review B, 1961