Thermally Stimulated Capacitance (TSCAP) in p-n Junctions
- 1 March 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (5) , 193-195
- https://doi.org/10.1063/1.1654104
Abstract
High‐frequency small‐signal capacitances of semiconductor junction vs temperature, from the initial conditions of filled and emptied traps in the junction depletion region, are used to determine the trap concentration and the thermal activation energies of trapped electrons and holes. Illustrations are given for silicon N + P diodes doped with gold impurity or irradiated with 1‐MeV electrons, showing the room‐temperature annealing for the latter.Keywords
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