On the determination of deep level center energy and concentration by thermally stimulated conductivity measurements using reverse-biased p-n junctions

This publication has 4 references indexed in Scilit:

• Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments
  Solid-State Electronics, 1970
• Determination of deep centers in silicon by thermally stimulated conductivity measurements
  Solid-State Electronics, 1969
• THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON
  Applied Physics Letters, 1969
• A Technique for Trap Determinations in Low-Resistivity Semiconductors
  Journal of Applied Physics, 1968