Oxygen in Czochralski silicon for ULSI
- 31 January 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 99 (1-4) , 654-664
- https://doi.org/10.1016/s0022-0248(08)80002-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Effects of boron concentration upon oxygen precipitation in CZ siliconJournal of Crystal Growth, 1987
- Oxygen Precipitation in P / P + ( 100 ) Epitaxial Silicon MaterialJournal of the Electrochemical Society, 1987
- Effects of 450 °C thermal annealing upon oxygen precipitation in heavily B- and Sb-doped Czochralski SiApplied Physics Letters, 1987
- Behavior of oxygen in the crystal formation and heat treatment of silicon heavily doped with antimonyJournal of Applied Physics, 1986
- Calibration of Infrared Absorption by Gamma Activation Analysis for Studies of Oxygen in SiliconJournal of the Electrochemical Society, 1986
- Suppression of thermal donor formation in heavily doped n-type siliconJournal of Applied Physics, 1985
- Growth characteristics of oxide precipitates in heavily doped silicon crystalsApplied Physics Letters, 1985
- United model for formation kinetics of oxygen thermal donors in siliconPhysical Review B, 1984
- Point defect aggregates in boron doped dislocation-free Czochralski silicon crystalsJournal of Crystal Growth, 1983
- The influence of thermal point defects on the precipitation of oxygen in dislocation-free silicon crystalsApplied Physics Letters, 1981