Impact of mixing of disturbed bonding states on time-dependent dielectric breakdown in SiO2 thin films
- 22 December 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (25) , 3721-3723
- https://doi.org/10.1063/1.120493
Abstract
A temperature-independent field acceleration parameter γ and a field-independent activation energy ΔH0 can be produced when different types of disturbed bonding states are mixed during time-dependent breakdown testing of SiO2 thin films. While γ for each defect type alone has the expected 1/T dependence and ΔH0 shows a linear decrease with electric field, a nearly temperature-independent γ and a field-independent ΔH0 can result when two or more states are mixed.Keywords
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