Time Resolved Transmission and Reflectivity of Pulsed Ruby Laser Irradiated Silicon
- 1 January 1981
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Induced Absorption in Silicon under Intense Laser Excitation: Evidence for a Self-Confined PlasmaPhysical Review Letters, 1981
- Time-resolved optical transmission of pulsed laser-irradiated siliconApplied Physics Letters, 1981
- Raman Measurement of Lattice Temperature during Pulsed Laser Heating of SiliconPhysical Review Letters, 1980
- Nonthermal pulsed laser annealing of Si; plasma annealingPhysics Letters A, 1979
- Calculation of the dynamics of surface melting during laser annealingApplied Physics Letters, 1979
- Temperature dependence of the optical properties of siliconJournal of Applied Physics, 1979
- A melting model for pulsing-laser annealing of implanted semiconductorsJournal of Applied Physics, 1979
- Dynamics of laser annealingAIP Conference Proceedings, 1979
- Band-to-band Auger Recombination in Silicon and GermaniumPhysica Scripta, 1973
- Recombination in strongly excited siliconSolid State Communications, 1971