Nonthermal pulsed laser annealing of Si; plasma annealing
- 1 December 1979
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 74 (6) , 422-426
- https://doi.org/10.1016/0375-9601(79)90242-1
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Picosecond laser-induced melting and resolidification morphology on SiApplied Physics Letters, 1979
- Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser IrradiationPhysical Review Letters, 1979
- A melting model for pulsing-laser annealing of implanted semiconductorsJournal of Applied Physics, 1979
- Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed siliconApplied Physics Letters, 1978
- Threshold for Optically Induced Dislocation Glide in GaAs-AlGaAs Double Heterostructures: Degradation via a New Cooperative Phenomenon?Physical Review Letters, 1978
- Effect of electron-hole pairs on phonon frequencies in Si related to temperature dependence of band gapsPhysical Review B, 1976
- Isotope shift at substitutional Cu in ZnOPhysical Review B, 1976
- Shapes of Two-Phonon Recombination Peaks in SiliconPhysical Review B, 1970
- Dielectric Screening Model for Lattice Vibrations of Diamond-Structure CrystalsPhysical Review B, 1969
- Thermal Conductivity of Silicon and Germanium from 3°K to the Melting PointPhysical Review B, 1964