Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed silicon

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Abstract
Experimentally observed laser‐induced redistributions of ion‐implanted dopants in silicon are explained theoretically in terms of diffusion in the molten state. Calculations of thermal and mass diffusion in silicon show that the redistribution of a dopant file after pulsed‐laser annealing is dependent on the time the dopant region remains molten and on the value of the mass‐diffusion coefficient for the particular dopant.