Investigation of CVD silicon nitride encapsulation for gallium arsenide

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Abstract
Post implant annealing of GaAs requires high temperature and samples need to be encapsulated with a passive dielectric film to prevent decomposition. In this work the suitability of rapidly deposited CVD Si3N4 has been investigated. The physical and chemical properties of films have been studied using a number of complementary physical techniques. Ellipsometry was used to measure film thickness and refractive index in characterization of growth conditions. Analysis of stoichiometry and film qality was assessed by Rutherford back-scattering on vitreous carbon and silicon substrates and by Auger profiling on GaAs. The effect of heat treatment on the-eletrical properties of n-on-n+ epi-CaAs was assessod by C-V profiling, cathodo-luminescence and DLTS. Finally the application of this technology to ion implantation in GaAs is demonstrated.