Generalized Matsubara-Toyozawa theory for the specific heat in heavily-phosphorus-doped silicon
- 15 April 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 19 (8) , 4125-4129
- https://doi.org/10.1103/physrevb.19.4125
Abstract
The previously developed theory for impurity bands in heavily doped semiconductors is used to calculate the specific heat of Si: P. It gives rough agreement with experimental data over a wide range of impurity concentration around the critical concentration for metal-nonmetal transition. Recent calculations based on the highly-correlated-electron-gas model are included for comparison.Keywords
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