Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Dopedn-Type Silicon. I. Metallic Samples

Results are presented for the measured electron spin resonance (ESR) spin susceptibilities of "metallic" phosphorus-doped silicon with $N_D\ge 1\times {10}^{19}$ donors/${\mathrm{cm}}^3$. These results agree closely for the case of $N_D\gtrsim 4\times {10}^{19}$ donors/${\mathrm{cm}}^3$ with values calculated on the basis of a "rigidband" model of noninteracting Pauli electrons. Evidence for a non-Pauli temperature-dependent-susceptibility component was found in the lower portion of our sample-concentration range. Static-susceptibility data are used together with our results to obtain the diamagnetic susceptibility which exhibits a concentration dependence consistent with the predictions of Kjeldaas and Kohn. Measurements of $g$ values and linewidths are presented as evidence for the proposal that the Fermi level enters the host conduction band at a concentration $N_D$ $\approx 2\times {10}^{19}$ donors/${\mathrm{cm}}^3$. These data are also used to verify Elliot's theory of impurity-scattering spin relaxation and to demonstrate $g$-value anisotropies characteristic of the silicon conduction band.