Strain symmetrization effects in pseudomorphic Si1−yCy/Si1−xGex superlattices
- 7 February 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (6) , 739-741
- https://doi.org/10.1063/1.111051
Abstract
We report on strain and stability measurements on pseudomorphic Si1−yCy/Si1−xGex superlattices which are synthesized by solid source molecular beam epitaxy on silicon (100) substrate. The strain in the superlattices alternates between tensile and compressive in the individual Si1−yCy and Si1−xGex alloy layers, respectively. A symmetrical strain distribution can be achieved directly on silicon by adjusting the carbon and the germanium content and/or the thickness of the individual layers. X‐ray diffraction and transmission electron microscopy are applied to investigate the structural properties and the thermal stability.Keywords
This publication has 9 references indexed in Scilit:
- Growth and strain compensation effects in the ternary Si1−x−yGexCy alloy systemApplied Physics Letters, 1992
- Thermal stability of Si1−xCx/Si strained layer superlatticesApplied Physics Letters, 1992
- The growth and characterization of Si1−yCy alloys on Si(001) substrateJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxyApplied Physics Letters, 1991
- Anomalous strain relaxation in SiGe thin films and superlatticesPhysical Review Letters, 1991
- Low Threading Dislocation Densities in Thick, Relaxed Si1−xGex Buffer LayersMRS Proceedings, 1991
- The Synthesis and Stability of Si1−yQy Alloys and Strained Layer SuperlatticesMRS Proceedings, 1991
- Symmetrically strained Si/Ge superlattices on Si substratesPhysical Review B, 1988
- Stability of semiconductor strained-layer superlatticesApplied Physics Letters, 1986