Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy
- 23 September 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (13) , 1611-1613
- https://doi.org/10.1063/1.106246
Abstract
A modulation-doped Si/GexSi1−x structure was fabricated in which a thin Si layer is employed as the conduction channel for the two-dimensional electron gas. The strained heterostructure is fabricated on top of a low threading dislocation density, totally relaxed, GexSi1−x buffer layer with a linearly graded Ge concentration profile. The mobility of the two-dimensional electron gas as determined from Hall measurements was 1600 cm2/V s at 300 K and 96 000 cm2/V s at 4.2 K. Recently, a 4.2 K mobility of 125 000 cm2/V s was observed from a similar sample.Keywords
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