Optimum energy resolution of semiconductor radiation detectors with preamplifiers using tubes, field-effect transistors and bipolar transistors
- 1 February 1966
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 40 (1) , 54-60
- https://doi.org/10.1016/0029-554x(66)90113-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Theory of the Yield and Fano Factor of Electron-Hole Pairs Generated in Semiconductors by High-Energy ParticlesPhysical Review B, 1965
- Design of Low-Noise Vacuum-Tube Pulse Amplifiers for Semiconductor Radiation-Detector SpectroscopyIEEE Transactions on Nuclear Science, 1964
- A Low-Noise Charge-Sensitive Preamplifier with a Field-Effect Transistor in the Input StageIEEE Transactions on Nuclear Science, 1964
- Considerations in the Design of Pulse Amplifiers for Use with Solid State Radiation DetectorsIRE Transactions on Nuclear Science, 1961
- Low Noise Transistor Amplifiers for Solid State DetectorsIRE Transactions on Nuclear Science, 1961
- Amplitude and Time Measurement in Nuclear PhysicsPublished by Elsevier ,1956