Extension of the Analysis of Quadruply Ionized Silicon (Si V)

Abstract
The observations of the Si V spectrum has been extended in the wavelength range 460-3 604 Å; about 120 new lines have been observed and classified. All the levels belonging to the 2p 54p, 4d, 4f, 5f and 5g configurations are located. Results of parametric calculations of these configurations are given. The first ionization limit has been determined at 1 345 070 cm-1 by means of the polarization formula.
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