Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge
- 1 June 1998
- journal article
- Published by Pleiades Publishing Ltd in Technical Physics Letters
- Vol. 24 (6) , 467-469
- https://doi.org/10.1134/1.1262149
Abstract
It is shown that GaN films can be grown by molecular-beam epitaxy with plasma activation of the nitrogen by a magnetron rf discharge in a specially constructed coaxial source with capacitive coupling. A growth rate of ∼0.1 μm/h is obtained on GaAs and sapphire substrates, and ways are found for optimizing the design of the plasma source in order to increase the growth rate. The electrophysical and luminescence properties of undoped epitaxial films are investigated at temperatures ranging all the way to room temperature.Keywords
This publication has 7 references indexed in Scilit:
- Supersonic jet epitaxy of III-nitride semiconductorsJournal of Crystal Growth, 1997
- Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride EpitaxyMRS Internet Journal of Nitride Semiconductor Research, 1997
- Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazineApplied Physics Letters, 1996
- Doping efficiency and plasma analysis of a nitrogen electron cyclotron resonance plasmaJournal of Crystal Growth, 1996
- Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE methodMRS Internet Journal of Nitride Semiconductor Research, 1996
- Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaNMRS Internet Journal of Nitride Semiconductor Research, 1996
- Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995