Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
Abstract
Epitaxial layers of GaN on c-plane sapphire are analyzed by continuous-wave and time-resolved photoluminescence at 4K and by X-ray diffraction. Besides the well-known emissions from hexagonal GaN we observe luminescence bands at 3.279 and 3.15 to 3.21 eV which are identified as the transition of the donor bound exciton and the donor-acceptor pair recombination in cubic GaN, respectively. Measurements of the luminescence decay times are essential for the clarification of the emission processes. Due to the probing depth of about 200 nm in PL we find that the fraction of cubic phase typically decreases with layer thickness. In our best samples, however, we do not detect the cubic phase at all.Keywords
This publication has 16 references indexed in Scilit:
- Picosecond dynamics of excitons in cubic GaNPhysical Review B, 1995
- Shallow donors in GaN—The binding energy and the electron effective massSolid State Communications, 1995
- Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAsJournal of Applied Physics, 1995
- Blue-violet light emitting gallium nitride p-n junctions grown by electron cyclotron resonance-assisted molecular beam epitaxyApplied Physics Letters, 1995
- Thermal stability of GaN thin films grown on (0001) Al2O3, (011̄2) Al2O3 and (0001)Si 6H-SiC substratesJournal of Applied Physics, 1994
- Photoluminescence of zinc-blende GaN under hydrostatic pressureApplied Physics Letters, 1994
- Optical properties near the band gap on hexagonal and cubic GaNApplied Physics Letters, 1994
- Growth of GaN by ECR-assisted MBEPhysica B: Condensed Matter, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Donor-acceptor pair recombination in GaNSolid State Communications, 1971