Carrier energy relaxation time in quantum-well lasers
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 31 (12) , 2148-2158
- https://doi.org/10.1109/3.477740
Abstract
No abstract availableKeywords
This publication has 34 references indexed in Scilit:
- Phonon scattering suppression in short periodic AlAs/GaAs multiple-quantum-well structuresJournal of Applied Physics, 1994
- Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasersIEEE Journal of Quantum Electronics, 1993
- Ultrafast Luminescence Spectroscopy of Semiconductors: Carrier Relaxation, Transport and TunnelingPublished by Elsevier ,1992
- Electron–optical-phonon interactions in ultrathin GaAs/AlAs multiple quantum wellsPhysical Review Letters, 1991
- Nonlinear gain suppression in semiconductor lasers due to carrier heatingIEEE Photonics Technology Letters, 1991
- Nonelectronic scattering of longitudinal-optical phonons in bulk polar semiconductorsPhysical Review B, 1991
- Electron–LO-phonon scattering rates in semiconductor quantum wellsPhysical Review B, 1990
- Time-resolved Raman scattering of nonequilibrium LO phonons in GaAs quantum wellsPhysical Review B, 1989
- Secondary emission studies of hot carrier relaxation in polar semiconductorsSolid-State Electronics, 1988
- The electron-phonon interaction in quasi-two-dimensional semiconductor quantum-well structuresJournal of Physics C: Solid State Physics, 1982