Subpicosecond photoresponse of carriers in low-temperature molecular beam epitaxial In0.52Al0.48As/InP
- 8 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (15) , 1543-1545
- https://doi.org/10.1063/1.103347
Abstract
Femtosecond time-resolved reflectivity and photoconductive switching measurements have been made of In0.52Al0.48As grown by molecular beam epitaxy on (100) InP substrates at growth temperatures ranging from 150 to 480 °C. A response/switching time of ∼400 fs is measured in the sample grown at 150 °C. Temperature-dependent measurements shed light on the nature of the material producing the ultrafast response.Keywords
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