High-speed electrooptic modulation in GaAs/GaAlAs waveguide devices
- 1 October 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 5 (10) , 1444-1453
- https://doi.org/10.1109/jlt.1987.1075432
Abstract
A figure of merit is constructed for broad-band electrooptic modulators which compares bandwidth with launched generator voltage standardized to a common wavelength. Comparison of various published results in terms of this figure shows that a lumped-element III-V semiconductor device performance may be no more than a factor of two below that of typical (i.e., LiNbO 3 ) traveling wave devices and are probably easier to implement-especially in an integrated format. Accurate modeling, which incorporates all transit time and velocity match effects, is described and found to agree well with experimental results. Experimental GaAs/GaAlAs modulators have been made, using a Mach-Zehnder interferometer configuration. At a wavelength of 1.15 μm and with unterminated drive a bandwidth of 6.5 GHz was obtained with V pi of 17.3 V. A shorter (34.6-v) device was ∼ 1.25-dB down at 8.4 GHz. The corresponding figures of merit are close to the maximum expected for the configurations used.Keywords
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