Broadband Y-branch electro-optic GaAs waveguide interferometer for 1.3 μm
- 1 March 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (5) , 462-464
- https://doi.org/10.1063/1.95613
Abstract
Electro‐optic Mach–Zehnder rib waveguide interferometers with low loss Y branches and Schottky barrier electrodes have been fabricated in n−/n+‐GaAs by reactive ion etching. With antireflection coating and optimized Y branches device losses of the interferometers at 1.3 μm were as low as 4 dB. In a push‐pull configuration drive voltages of only 13 V suffice to attain a modulation depth of 12.7 dB. The optical signal bandwidth of these interferometers was measured to exceed 4.5 GHz.Keywords
This publication has 10 references indexed in Scilit:
- Optical guided-wave gallium arsenide monolithic interferometerApplied Physics Letters, 1984
- Electro-optic modulator on Ti:LiNbO 3 with very low drive voltageElectronics Letters, 1984
- Reactive ion etched GaAs optical waveguide modulators with low loss and high speedElectronics Letters, 1984
- 17-GHz bandwidth electro-optic modulatorApplied Physics Letters, 1983
- Waveguide Electrooptic ModulatorsIEEE Transactions on Microwave Theory and Techniques, 1982
- Integrated optical SSB modulator/frequency shifterIEEE Journal of Quantum Electronics, 1981
- Integrated optic frequency shifter modulatorElectronics Letters, 1981
- Normalised power transmission in single mode optical branching waveguidesElectronics Letters, 1981
- Calibration of optical modulator frequency response with application to signal level controlApplied Optics, 1978
- Electro-optic light modulator with branched ridge waveguideApplied Physics Letters, 1975