Accurate simulation of GaAs MESFET's intermodulation distortion using a new drain-source current model
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 42 (1) , 25-33
- https://doi.org/10.1109/22.265524
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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