Optimization of Third-Order Intermodulation Product and Output Power from an X-Band MESFET Amplifier Using Volterra Series Analysis
- 1 December 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 33 (12) , 1395-1403
- https://doi.org/10.1109/tmtt.1985.1133230
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- RF Characterization of Microwave Power Fet'sIEEE Transactions on Microwave Theory and Techniques, 1981
- GaAs FET large-signal model and its application to circuit designsIEEE Transactions on Electron Devices, 1981
- Intermodulation Distortion Analysis of MESFET Amplifiers Using the Volterra Series RepresentationIEEE Transactions on Microwave Theory and Techniques, 1980
- Analysis and Improvement of Intermodulation Distortion in GaAs Power FET'sIEEE Transactions on Microwave Theory and Techniques, 1980
- Third-Order Intermodulation Distortion and Gain Compression in GaAs Fet'sIEEE Transactions on Microwave Theory and Techniques, 1979
- A Technique for Predicting Large-Signal Performance of a GaAs MESFETIEEE Transactions on Microwave Theory and Techniques, 1978
- Profile design for distortion reduction in microwave field-effect transistorsElectronics Letters, 1978
- Distortion in high-frequency FET amplifiersIEEE Journal of Solid-State Circuits, 1974
- Analysis of nonlinear systems with multiple inputsProceedings of the IEEE, 1974
- The output properties of Volterra systems (nonlinear systems with memory) driven by harmonic and Gaussian inputsProceedings of the IEEE, 1971