Profile design for distortion reduction in microwave field-effect transistors
- 16 March 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (6) , 204-206
- https://doi.org/10.1049/el:19780136
Abstract
Profile shaping can reduce third-order intermodulation distortion in microwave f.e.t.s. The mathematical form of the profiles to accomplish this has been derived. It is shown that two forms are possible, one corresponding to a doping spike, the other to an inverse cubic decrease in doping with distance from the episurface. The first has been approximated by workers in the field. The second is believed to be novel.Keywords
This publication has 1 reference indexed in Scilit:
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975