Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors

This publication has 58 references indexed in Scilit:

• Value of electron diffusion constant in GaAs for high electric field
  Applied Physics Letters, 1974
• Effect of source lead inductance on the noise figure of a GaAs FET
  Proceedings of the IEEE, 1974
• Si and GaAs 0.5 μ m-gate Schottky-barrier field-effect transistors
  Electronics Letters, 1973
• Noise behavior of GaAs field-effect transistors with short gate lengths
  IEEE Transactions on Electron Devices, 1972
• Characteristics of the junction-gate field effect transistor with short channel length
  Solid-State Electronics, 1971
• Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies
  IEEE Transactions on Electron Devices, 1971
• Semiconductor impurity analysis from low-frequency noise spectra
  IEEE Transactions on Electron Devices, 1971
• Growth of Two- and Three-Dimensional Space Charge from Negative Differential Resistivity
  Journal of Applied Physics, 1968
• Thermal noise in junction-gate field-effect transistors
  IEEE Transactions on Electron Devices, 1966
• The Field Effect Transistor
  Bell System Technical Journal, 1955