Value of electron diffusion constant in GaAs for high electric field
- 15 December 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (12) , 721-723
- https://doi.org/10.1063/1.1655375
Abstract
The value of the electron diffusion constant in GaAs for electric fields of nearly 50 and 150 kV/cm has been estimated by measuring microwave impedances of two double‐step doping profile (``high‐low'') GaAs IMPATT diodes. In the investigated cases, it is shown that the electron diffusion constant does not exceed 20 and 50 cm2/s for E =50 and 150 kV/cm, respectively.Keywords
This publication has 4 references indexed in Scilit:
- Theoretical and experimental study of GaAs IMPATT oscillator efficiencyJournal of Applied Physics, 1973
- Nonlinear properties of IMPATT devicesProceedings of the IEEE, 1973
- Determination of the intrinsic response time of semiconductor avalanches from microwave measurementsSolid-State Electronics, 1972
- Carrier Diffusion in Semiconductor AvalanchesJournal of Applied Physics, 1970