Determination of the intrinsic response time of semiconductor avalanches from microwave measurements
- 30 June 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (6) , 635-647
- https://doi.org/10.1016/0038-1101(72)90006-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- F.m. noise of low-level-operating IMPATT-diode oscillatorsElectronics Letters, 1971
- Circuit representation of avalanche region of IMPATT diodes for different carrier velocities and ionisation rates of electrons and holesElectronics Letters, 1970
- Quasistatic Approximation for Semiconductor AvalanchesJournal of Applied Physics, 1970
- Analysis of the I(V) characteristics of p+-n-π-p+structures for the determination of hole velocity in siliconIEEE Transactions on Electron Devices, 1969
- Time Dependence of Avalanche Processes in SiliconJournal of Applied Physics, 1967
- Noise of a Self-Sustaining Avalanche Discharge in Silicon: Low-Frequency Noise StudiesJournal of Applied Physics, 1967
- Avalanche Region of IMPATT DiodesBell System Technical Journal, 1966
- Signal and noise response of high speed germanium avalanche photodiodesIEEE Transactions on Electron Devices, 1966
- The frequency response of avalanching photodiodesIEEE Transactions on Electron Devices, 1966
- Noise theory for the read type avalanche diodeIEEE Transactions on Electron Devices, 1966