Noise of a Self-Sustaining Avalanche Discharge in Silicon: Low-Frequency Noise Studies

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Abstract
The noise theory for a self‐sustaining avalanche discharge, which was published recently by Hines, is verified experimentally for low frequencies. It was found, in general, that the open‐circuit spectral voltage density, 〈u2〉Av/Δf, arises from three contributions: (1) the inherent avalanche noise calculated by Hines and given by 〈u02〉Av/Δf = a2Vb2/I, where a2=3.3×10−20 A/Hz, Vb = breakdown voltage and I = avalanche current; (2) excess noise at low current densities caused by nonuniformities of avalanche breakdown (even in microplasma‐free diodes); and (3) excess noise at high current densities which seems to be caused by thermal effects. The temperature dependence of the noise is entirely due to the two excess‐noise contributions. The experimental results are discussed with respect to their application in the design of noise generators, low‐noise and low‐current avalanche diodes, microwave oscillators, and negative‐resistance amplifiers.

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