Avalanche Effects in Silicon p—n Junctions. I. Localized Photomultiplication Studies on Microplasmas

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Abstract
An improved experimental technique is described for the investigation of carrier multiplication in very small areas, particularly microplasmas. A light spot of a few microns diameter is positioned to cover a microplasma of comparable or smaller size and the multiplied photocurrent is measured as a function of reverse voltage. When the size of the microplasma is much smaller than the light spot, then the multiplication as a function of voltage is dependent upon the characteristics of the microplasma in an upper voltage range just below the microplasma breakdown voltage. In a lower voltage range the microplasma has negligible effect on multiplication. By comparing for the upper and lower voltage ranges the behavior of the reciprocal of the multiplication factor as a function of voltage, it is possible to determine that the diameters of the area of the microplasma regions vary from less than one to more than 5 μ. Multiplication factors as high as 106 were measured. At high multiplication (M>100), a deviation from the theoretically expected linear dependence of 1/M vs V is observed. This deviation can be described by two effects: (1) the influence of the space charge of the multiplied carriers and (2) the pulsing mechanism of the microplasma. Because of this deviation, microplasma diameters of less than 1 μ cannot be accurately determined. Another consequence of the pulsing effect is an apparent negative resistance in the V—I characteristic of a diode containing a microplasma. Dependence of the apparent negative resistance on load resistance, shunting capacity, and light intensity was investigated, and can be explained with the pulse model.

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