Voltage Dependence of Microplasma Density in p-n Junctions in Silicon
- 1 December 1961
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 32 (12) , 2646-2650
- https://doi.org/10.1063/1.1728366
Abstract
The voltage distribution of breakdown spots in p—n junctions was measured. A junction in silicon which was uniform in its crystallographic properties, and had an impurity gradient of 1022 cm−4, showed two kinds of microplasmas. One type is characterized by bright light emission and low breakdown voltage, and the other has less light emission and higher breakdown voltage. Both have broad distribution of breakdown voltages of the order of several volts. Samples containing a grain boundary show a line of light emitting spots having a minimum spacing of 7000 A versus a 40‐A spacing of dislocations along the grain boundary.This publication has 13 references indexed in Scilit:
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Uniform Avalanche Effect in Silicon Three-Layer DiodesJournal of Applied Physics, 1960
- Visible Light Emission and Microplasma Phenomena in Silicon p-n Junction II. Classification of weak spots in diffused p-n junctionsJournal of the Physics Society Japan, 1960
- Uniform Silicon p-n Junctions. I. Broad Area BreakdownJournal of Applied Physics, 1960
- Visible Light Emission and Microplasma Phenomena in Silicon p–n Junction, I.Journal of the Physics Society Japan, 1960
- Diffused Junction Depletion Layer CalculationsBell System Technical Journal, 1960
- Effect of Dislocations on Breakdown in Silicon p-n JunctionsJournal of Applied Physics, 1958
- Internal Field Emission in SiliconJunctionsPhysical Review B, 1957
- Copper Precipitation on Dislocations in SiliconJournal of Applied Physics, 1956
- Photon Emission from Avalanche Breakdown in SiliconPhysical Review B, 1956