Uniform Avalanche Effect in Silicon Three-Layer Diodes
- 1 December 1960
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 31 (12) , 2260-2261
- https://doi.org/10.1063/1.1735533
Abstract
Interaction of current gain and avalanche multiplication in three-layer diodes is utilized to produce uniform avalanche effect, indicated by uniform light emission over the area of a junction. Proof that the effect is caused by the three-layer action is furnished by removing the emitter layer, which changes the light emission to the usually observed microplasma pattern.This publication has 1 reference indexed in Scilit:
- Effect of Dislocations on Breakdown in Silicon p-n JunctionsJournal of Applied Physics, 1958