Model for the Electrical Behavior of a Microplasma
- 1 May 1964
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (5) , 1370-1376
- https://doi.org/10.1063/1.1713636
Abstract
The complex current fluctuations observed in connection with microplasma breakdown can be explained by a simple model containing two constants: extrapolated breakdown voltage Vb and series resistance Rs; and two continuous probability functions: turnoff probability per unit time p10(I) as a function of pulse current I and turn-on probability per unit time p01. Experimental methods allowing an accurate measurement of these four quantities are described. The new concept of an extrapolated breakdown voltage Vb is discussed based on two independent measurements: one of secondary multiplication and the other of instantaneous current, both as a function of voltage. Within the experimental accuracy of 20 mV both methods extrapolated to one and the same breakdown voltage. The turnoff probability p10(I) is determined by a new combination of experimental techniques to cover the current range from 5 to 70 μA with a variation of 11 decades for p10(I). The observation of a narrow turnoff interval is explained quantitatively.This publication has 11 references indexed in Scilit:
- Avalanche Effects in Silicon p—n Junctions. I. Localized Photomultiplication Studies on MicroplasmasJournal of Applied Physics, 1963
- Theory of Microplasma Instability in SiliconJournal of Applied Physics, 1961
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Visible Light Emission and Microplasma Phenomena in Silicon p–n Junction, I.Journal of the Physics Society Japan, 1960
- Microplasma Fluctuations in SiliconJournal of Applied Physics, 1959
- Effect of Dislocations on Breakdown in Silicon p-n JunctionsJournal of Applied Physics, 1958
- Breakdown in SiliconPhysical Review B, 1958
- Internal Field Emission in SiliconJunctionsPhysical Review B, 1957
- Microplasmas in SiliconPhysical Review B, 1957
- Avalanche Breakdown in SiliconPhysical Review B, 1954