Characteristics of the junction-gate field effect transistor with short channel length
- 31 December 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (12) , 1307-1317
- https://doi.org/10.1016/0038-1101(71)90120-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Computer Aided Two-dimensional Analysis of the Junction Field-effect TransistorIBM Journal of Research and Development, 1970
- General theory for pinched operation of the junction-gate FETSolid-State Electronics, 1969
- Current saturation and drain conductance of junction-gate field-effect transistorsSolid-State Electronics, 1967
- Characteristics of junction field effect devices with small channel length-to-width ratiosSolid-State Electronics, 1967
- Physical phenomenon responsible for saturation current in field effect devicesSolid-State Electronics, 1963
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953