General theory for pinched operation of the junction-gate FET

This publication has 8 references indexed in Scilit:

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  Solid-State Electronics, 1967
• Electron drift velocity in avalanching silicon diodes
  IEEE Transactions on Electron Devices, 1967
• Measurement of the drift velocity of holes in silicon at high-field strengths
  IEEE Transactions on Electron Devices, 1967
• Measurement of high-field carrier drift velocities in silicon by a time-of-flight technique
  IEEE Transactions on Electron Devices, 1967
• The equivalent circuit of an arbitrarily doped field-effect transistor
  Solid-State Electronics, 1965
• Carrier mobility and current saturation in the MOS transistor
  IEEE Transactions on Electron Devices, 1965
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  IEEE Transactions on Electron Devices, 1963
• Joining solutions at the pinch-off point in “field-effect” transistor
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