Growth of Two- and Three-Dimensional Space Charge from Negative Differential Resistivity

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Abstract
Some simple cases are considered of two‐ and three‐dimensional space‐charge growth in a semiconductor such as GaAs which can exhibit a negative differential resistance to the one component of small perturbation electric fields parallel to a large bias electric field. These indicate that finite space‐charge distributions will generally grow much slower than previous one‐dimensional calculations have suggested for infinite layer distributions. This is because the differential resistance is always positive to components of the perturbation field perpendicular to the bias field.

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