LSA Oscillator-Diode Theory
- 1 July 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (8) , 3096-3101
- https://doi.org/10.1063/1.1710069
Abstract
The efficiency, negative resistance, and conditions for space‐charge control relevant to operation of a bulk semiconductor diode in the limited space‐charge accumulation (LSA) mode of oscillation are discussed. Numerical results for n‐GaAs indicate a maximum dc to rf‐conversion efficiency of 18.5% for sine‐wave excitation. The usable range of doping to frequency for n‐GaAs is found to be 2×104 to 2×105 sec/cm3 with an optimum value of about 6×104 sec/cm3. Although a reduction in efficiency at frequencies above 100 GHz is expected due to the finite response time of GaAs, worthwhile efficiency may be obtained at several hundred GHz.This publication has 27 references indexed in Scilit:
- MEASUREMENT OF THE VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDEApplied Physics Letters, 1967
- CW Operation of LSA Oscillator Diodes-44 to 88 GHzBell System Technical Journal, 1967
- BULK GaAs NEGATIVE CONDUCTANCE AMPLIFIERSApplied Physics Letters, 1966
- Domain Velocity, Stability, and Impedance in the Gunn EffectPhysical Review Letters, 1966
- Stable Space-Charge Layers in Two-Valley SemiconductorsJournal of Applied Physics, 1966
- Nonlinear Analysis of the Gunn EffectPhysical Review B, 1966
- A simple analysis of stable domain propagation in the Gunn effectBritish Journal of Applied Physics, 1966
- Oscillations covering 4 Gc/s to 31 Gc/s from a single Gunn diodeElectronics Letters, 1966
- The intervalley transfer mechanism of negative resistivity in bulk semiconductorsProceedings of the Physical Society, 1965
- The Possibility of Negative Resistance Effects in SemiconductorsProceedings of the Physical Society, 1961