Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2×1-Sb
- 31 December 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 65 (27) , 3417-3420
- https://doi.org/10.1103/physrevlett.65.3417
Abstract
Surface extended x-ray-absorption fine structure (SEXAFS) has been combined with scanning tunneling microscopy (STM) to determine both the local and long-range bonding properties of the Si(001)2×1-Sb interface. Sb edge SEXAFS shows that Sb dimers occupy a modified bridge site on the Si(001) surface with a Sb-Sb near-neighbor distance of 2.88±0.03 Å. Each Sb atom of the dimer is bonded to two Si atoms with a Sb-Si bond length of 2.63±0.04 Å. STM resolves the dimer structure and provides the long-range periodicity of the surface. Low-energy-electron diffraction of vicinal Si(001) shows that the Sb dimer chains run perpendicular to the original Si dimer chains.
Keywords
This publication has 12 references indexed in Scilit:
- Reconstructions of GaAs(1¯ 1¯ 1¯) surfaces observed by scanning tunneling microscopyPhysical Review Letters, 1990
- Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopyPhysical Review B, 1989
- Sb-induced bulk band transitions in Si(111) and Si(001) observed in synchrotron photoemission studiesPhysical Review B, 1989
- Arsenic‐terminated silicon and germanium surfaces studied by scanning tunnelling microscopyJournal of Microscopy, 1988
- Scanning tunneling microscopeReview of Scientific Instruments, 1987
- AN OVERVIEW OF SEXAFS DURING THE PAST DECADELe Journal de Physique Colloques, 1986
- Polarization-dependent phase and amplitude interference effects in thesurface extended x-ray absorption fine structurePhysical Review B, 1983
- Surface Studies by Scanning Tunneling MicroscopyPhysical Review Letters, 1982
- An ultra-high-vacuum double crystal monochromator beam line for studies in the spectral range 500–4000 eVNuclear Instruments and Methods, 1980
- Evidence for a Surface-State Exciton on GaAs(110)Physical Review Letters, 1975