Reconstructions of GaAs(1¯ 1¯ 1¯) surfaces observed by scanning tunneling microscopy
- 23 July 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 65 (4) , 452-455
- https://doi.org/10.1103/physrevlett.65.452
Abstract
We present scanning tunneling microscopy images of the As-rich (2×2) and the Ga-rich (√19 × √19 ) reconstructions of the GaAs(1¯ 1¯ 1¯) surface produced in situ by molecular-beam epitaxy. From the experimental results and total-energy calculations we show that the (2×2) surface consists of As adatom trimers bonded to the underlying surface. The (√19 × √19 ) unit cell is dominated by a two-layer hexagonal ring.Keywords
This publication has 11 references indexed in Scilit:
- Surface reconstructions of GaAs(100) observed by scanning tunneling microscopyPhysical Review B, 1990
- Energetics of GaAs island formation on Si(100)Physical Review Letters, 1989
- Structure of GaAs(001)Determined by Scanning Tunneling MicroscopyPhysical Review Letters, 1988
- Ab initiotheory of polar semiconductor surfaces. I. Methodology and the (22) reconstructions of GaAs(111)Physical Review B, 1987
- Atomic structure of the (2×2) reconstructed GaAs(1¯1¯1¯) surface: A multivacancy modelPhysical Review Letters, 1986
- Vacancy-Buckling Model for the (2×2) GaAs(111) SurfacePhysical Review Letters, 1984
- Theory of polar semiconductor surfacesJournal of Vacuum Science and Technology, 1979
- Energy-Minimization Approach to the Atomic Geometry of Semiconductor SurfacesPhysical Review Letters, 1978
- Surface stoichiometry and structure of GaAsSurface Science, 1974
- Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface StructuresJournal of Applied Physics, 1970