Atomic structure of the (2×2) reconstructed GaAs(1¯1¯1¯) surface: A multivacancy model
- 7 July 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 57 (1) , 102-105
- https://doi.org/10.1103/physrevlett.57.102
Abstract
A new vacancy-complex model for the (2×2) reconstructed As-stabilized (1¯ 1¯ 1¯) surface of GaAs in which the surface bilayer contains two As and three Ga atoms per unit cell is proposed. Half the surface As atoms occupy stacking-fault sites, leading to nearly optimal rehybridizations of surface-bonding orbitals. The surface As coverage is consistent with both mass spectrometry and Auger data. The calculated surface electronic structure is nonmetallic and provides a satisfactory description of polarization-dependent angle-resolved photoemission data.Keywords
This publication has 17 references indexed in Scilit:
- (2×2) reconstructions of the {111} polar surfaces of GaAsPhysical Review B, 1986
- Model-Independent Structure Determination of the InSb(111)2×2 Surface with Use of Synchrotron X-Ray DiffractionPhysical Review Letters, 1985
- Comparison between the Electronic Structures of GaAs(111) andfrom Angle-Resolved PhotoemissionPhysical Review Letters, 1984
- Vacancy-Induced 2×2 Reconstruction of the Ga(111) Surface of GaAsPhysical Review Letters, 1984
- Vacancy-Buckling Model for the (2×2) GaAs(111) SurfacePhysical Review Letters, 1984
- Angular resolved ups of surface states on GaAs(111) prepared by molecular beam epitaxySurface Science, 1979
- (110) surface atomic structures of covalent and ionic semiconductorsPhysical Review B, 1979
- Composition, structure, surface states, and O2 sticking coefficient for differently prepared GaAs(111)As surfacesSurface Science, 1977
- Surface stoichiometry and structure of GaAsSurface Science, 1974
- Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface StructuresJournal of Applied Physics, 1970